rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, in c. 1 of 8 sda - 6000 gaas distributed amplif i er rfmds sda - 6000 is a directly coupled (dc) gaas microwave monolithic integrated circuit (mmic) distributed driver amplifier die designed to support a wide arra y of high frequency commercial, military, and space applications. they are ideal for wideband amplifier gain blocks, modulators, clock drivers, broa dband automated test equipment (ate), military, and aerospace applications. functional block diagram ordering information sda - 6000 gaas distributed amplifier , gel pa k , 10 pieces or more sda - 6000 sb sample bag, gaas distributed amplifier, gelpak, 2 pieces package: die, 2.2 1 mm x 1. 21 mm x 0.102mm features dc to 50 ghz operation output voltage to 3 v pp gain = 8 db typical noise figure = 4 .5 db typical 80 ma total current applications drive for single - ended (se) mzm nrz, dpsk, odb, rz clock driver for rz and cs pulse carver broadband ate instrumentation military aerospace sda - 6000
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 2 of 8 sda - 6 000 absolute maximum rat ings parameter rating unit drain bias voltage (v dd ) + 9 .0 v dc gate bias voltage (v ti ) - 2 to + 1 v dc gate bias voltage (v g2 ) (v dd - 5 .0) to v dd v dc rf input power (v dd = +8.0v dc ) + 15 dbm operating junction temperature (t j ) +1 50 c continuous power dissipation (t = +85c) 7 00 m w thermal resistance (pad to die bottom) 93 c/w storage temperature - 40 to +150 c operating temperature - 40 to +85 c esd jesd22 - a114 human body model (hbm) class 0 (all pads) caution! esd sensitive device. rfmd green: rohs compliant per eu directive 2011/65/eu, halogen free per iec 61249 - 2 - 21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max general performance t a = +25c, v dd = + 5 v dc , v g2 = +2.2 v dc , i dd = 80 ma * operating frequency dc 50 ghz 3db bw gain 8 db output voltage 3 v p - p o ip3 at mid - band 24 dbm p1db at mid - band 14.5 dbm 20 ghz p3db at mid - band 16.5 dbm 20 ghz noise figure at mid - band 5.0 db 20 ghz input return loss 12 db dc to 50ghz output return loss 12 db dc to 50ghz supply current 80 ma supply voltage 5 v dc *adjust v ti between - 1.5v dc to +0.2v dc to achieve i dd = 80 ma typical .
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 3 of 8 sda - 6 000 typical performance (see section at the end of the data sheet for measurement comments)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 4 of 8 sda - 6 000 typical performance ( continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 5 of 8 sda - 6 000 application schematic die drawing ( dimensions in microns ) notes: 1. no connection required for unlabeled bond pads 2. die thickness is 0.102mm (4mil ) 3. typical bond pad is 0.100mm square 4. backside metallization: gold 5. backside metal is ground 6. bond pad metallization: gold
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 6 of 8 sda - 6 000 pin names and descriptions pin name description interface schematic 1 rfin rf input. this pad is dc coupled and matched to 50 from dc to 50 ghz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for rf input and output. a dc blocking capacitor is required for this connection. the calue of this capacitor will be based on the desire d frequency range of application. 2 vg2 each amplifier stage in the sda - 6000 is a cascade configuration. the gate of each upper fet in the cascade amplifiers is biased with the 2.2 v dc supply mentioned in this data sheet. the dc connection for the upper device gates runs across the length of the die. pads 2 and 5 are both on this dc connection but are on op posite ends of the die. the 2.2 v dc connection can therefore be placed on either pad. a bypass capacitor is recommended on both ends, pads 2 and 5. 3 vto the output drain termination pad. this pad requires a 1000pf bypass capacitor with the shortest wirebond length to prevent low frequency gain ripple. 4 rfout and vdd rf output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for rf input and output. connect the dc bias (v dd ) network to provide drain current (i dd ). note: drain bias (v dd ) must be applied through a broadband bias tee or external bias network. 5 vcas e ach amplifier stage in the sda - 6 000 is a cascade configuration. the gate of each upper fet in the cascade a mplifiers is biased with the 2.2 v dc supply mentioned in this data sheet . the dc connection for the upper device gates runs across the length of the die. pads 2 and 5 are both on this dc connection but are on opposite ends of the die. the 2.2 v dc connection can therefore be placed on either pad. a bypass capacitor is recommende d on both ends, pads 2 and 5. 6 vg21 not connected. 7 vti input gate voltage for the lower devices in the cascade amplifier. this pad also serves as the rf ground for the input termination resistor. the dc voltage applied to this pad will be between - 2 v dc (device is pinched off) to +1 v dc (fully on). the value of this capacitor will effect the low frequency response of the amplifier. die gnd ground connection. connect die bottom directly to ground plane for best performance. note: the die should be connected directly to the ground plane with conductive epoxy.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 7 of 8 sda - 6 000 bias sequence (turn device on): vti - apply negative - 2.0 volts. (this shuts the device off.) vg2 - apply positive 2.2 volts. vdd - apply positive 5 .0 volts to the rf output bias tee. important - adjust vti between - 2 to +1 volts to achieve idd = 80 ma nominal. bias sequence (turn device o ff): vti - return to negative - 2.0 volts. vdd - remove positive 5 .0 volts to the rf output bias tee. vg2 - remove positive 2.2 volts. assembly diagr am
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 1 40210 for sales or technical support, contac t rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applic ation circuitry and specifications at any time without prior notice. 8 of 8 sda - 6 000 measurement technique all data presented in this document represents the integrated circuit and accompanying bond wires. all performance data reported in this document were measured in the following manner. data was taken using a temperature controlled probe station utilizing 150 m pitch gsg probes. the interface between the probes and integrated circuit was made with a cop lanar to microstrip ceramic test interface. the test interface was wire bonded to the die using 1 mil diameter bondwires. the spacing between the test interface and the die was 200 m, and the bond wire loop height was 100 m. the calibration of t he test f ixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire attachment to the ceramic interface. the presented data therefore represents the chip plus wirebonds. sda - 6000 product image
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